FQPF20N06 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 60V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
10¹
10⁰
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
100
80
V = 10V
GS
60
V = 20V
GS
40
20
※ Note : T_J = 25℃
0
0
10
20
30
40
50
60
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
800
C
oss
C
iss
400
C
rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
10⁰
175℃
25℃
10^-1
2
-55℃
※ Notes :
1. V =25V
2. 25^DS0μ s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
175℃
0.4
25℃
※ Notes :
1.
2.
2V5^G0^Sμ^=s0VPulse
Test
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 30V
DS
V = 48V
DS
8
6
4
2
※ Note : I = 20A
D
0
0
2
4
6
8
10
12
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001