FQPF1N60T Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
10⁰
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10^-1
10^-2
10^-1

Notes :
1. 250s Pulse Test
2. T_C = 25
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
30
25
V_GS = 10V
20
V_GS = 20V
15
10
5

Note : T_J = 25
0
0.0
0.5
1.0
1.5
2.0
2.5
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
200
150
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C
iss
C_oss
100

Notes :
1. V_GS = 0 V
50
C_rss
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10⁰
10^-1
2
150

25

-55


Notes :
1. V_DS = 50V
2. 250s Pulse Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150
25


Notes :
1. V =0V
GS
2. 250s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V_DS = 120V
10
V_DS = 300V
V_DS = 480V
8
6
4
2

Note : I_D = 1.2 A
0
0
1
2
3
4
5
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000