FQPF17P06 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 60V P-Channel MOSFET

Typical Characteristics
V
GS
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
10¹
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
10⁰
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
10⁰
10¹
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
V_GS = - 10V
V_GS = - 20V
※ Note : T = 25℃
J
20
40
60
80
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10^-1
Coss
Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
10⁰
10¹
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
10¹
175℃
10⁰
25℃
10^-1
2
-55℃
※ Notes :
1. V_DS = -30V
2. 250μ s Pulse Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
175℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
10^-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -30V
DS
8
V_DS = -48V
6
4
2
※ Note : I_D = -17 A
0
0
4
8
12
16
20
24
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2. May 2001