FQPF13N10 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 100V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
10¹
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μs Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.8
0.6
V = 10V
GS
V = 20V
GS
0.4
0.2
※ Note : T = 25℃
J
0.0
0
10
20
30
40
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
900
750
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
600
C
iss
450
C
oss
300
※ Notes :
1. V_GS = 0 V
C
2. f = 1 MHz
150
rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10¹
175℃
10⁰
25℃
10^-1
2
-55℃
※ Notes :
1. V_DS = 40V
2. 250μs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
175℃
25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 50V
10
DS
V = 80V
DS
8
6
4
2
※ Note : I_D = 12.8A
0
0
2
4
6
8
10
12
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, January 2001