FQPF12P20 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 200V P-Channel MOSFET

Typical Characteristics
V
GS
Top : -15.0 V
-10.0 V
10¹
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
10⁰
10¹
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.0
1.5
V = - 10V
GS
V = - 20V
GS
1.0
0.5
※ Note : T = 25℃
J
0.0
0
10
20
30
40
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2400
2000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
1600
1200
C_iss
C_oss
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
800
C
rss
400
0
10^-1
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10¹
10⁰
10^-1
2
150℃
25℃
-55℃
※ Notes :
1. V_DS = -40V
2. 250μs Pulse Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.0
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V_DS = -40V
10
V = -100V
DS
8
V_DS = -160V
6
4
2
※ Note : I_D = -11.5 A
0
0
5
10
15
20
25
30
35
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, May 2000