FQPF12P10 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 100V P-Channel MOSFET

Typical Characteristics
V_GS
Top : -15.0 V
10¹
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
10^{0 Bottom : -4.5 V}
10^-1
10^-2
10^-1
" Notes :
1. 250# s Pulse Test
2. T_C = 25!
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.8
V_GS = - 10V
0.6
V = - 20V
GS
0.4
0.2
" Note : T_J = 25!
0.0
0
10
20
30
40
-I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1600
1400
1200
1000
800
600
400
200
0
10^-1
C_oss
C
iss
C
rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
" Notes :
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
10¹
10⁰
10^-1
2
175!
25!
-55!
" Notes :
1. V_DS = -40V
2. 250# s Pulse Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.0
175! 25!
" Notes :
1. V = 0V
GS
2. 250# s Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -20V
10
DS
V_DS = -50V
8
V_DS = -80V
6
4
2
" Note : I_D = -11.5 A
0
0
4
8
12
16
20
24
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, August 2002