FQPF12N60CT Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top : 15V.0^GSV
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
10¹ Bottom : 4.5 V
œ Notes :
10⁰
1. 250µs Pulse Test
2. T_C = 25
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
10¹
150^oC
25^oC
10⁰
-55^oC
10^-1
2
œ Notes :
1. V_DS = 40V
2. 250µs Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.5
V_GS = 10V
1.0
0.5
0
V_GS = 20V
œ Note : T_J = 25
5
10
15
20
25
30
35
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
3500
3000
2500
2000
1500
1000
500
0
10^-1
C_iss
C_oss
C_rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
œ Notes ;
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
10¹
10⁰
10^-1
0.2
150
25
œ Notes :
1. V_GS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
V_DS = 120V
10
V_DS = 300V
8
V_DS = 480V
6
4
2
œ Note : I_D = 12A
0
0
10
20
30
40
50
Q_G, Total Gate Charge [nC]
3
FQPF12N60CT Rev. A
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