FQPF11N40CT Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ

Typical Performance Characteristics
Figure 1. On-Region Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
10¹
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10⁰
Notes :
1. 250μs Pulse Test
2. T_C = 25°C
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
V_GS = 10V
1.5
1.0
V_GS = 20V
0.5
Note : T_J = 25°C
0
5
10
15
20
25
30
35
40
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10^-1
C_iss
C_oss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_rss
Notes ;
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
150°C
25°C
10⁰
-55°C
10^-1
2
Notes :
1. V_DS = 40V
2. 250μs Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10¹
10⁰
150°C
25°C
Notes :
1. V_GS = 0V
2. 250μs Pulse Test
10^-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
V_DS = 100V
V_DS = 250V
8
V_DS = 400V
6
4
2
Note : I_D = 10.5A
0
0
5
10
15
20
25
30
Q_G, Total Gate Charge [nC]
©2003 Fairchild Semiconductor Corporation
3
FQP11N40C / FQPF11N40C Rev. C1
www.fairchildsemi.com