FQP8P10 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 100V P-Channel MOSFET

Typical Characteristics
V_GS
Top : -15.0 V
10¹
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
10^{0 Bottom : -4.5 V}
10^-1
10^-2
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.5
1.2
V = - 10V
GS
0.9
V_GS = - 20V
0.6
0.3
※ Note : T_J = 25℃
0.0
0
5
10
15
20
25
-I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
900
800
700
600
500
400
300
200
100
0
10^-1
C_oss
C
iss
C
rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
10¹
10⁰
10^-1
2
175℃
25℃
-55℃
※ Notes :
1. V_DS = -40V
2. 250μ s Pulse Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.0
175℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -20V
10
DS
V = -50V
DS
8
V_DS = -80V
6
4
2
※ Note : I_D = -8.0 A
0
0
2
4
6
8
10
12
14
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, August 2002