FQP8N25 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 250V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
10¹
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μs Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
2.0
1.6
V = 10V
GS
V = 20V
GS
1.2
0.8
0.4
※ Note : T = 25℃
J
0.0
0
5
10
15
20
25
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
800
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
600
C_iss
C
oss
400
※ Notes :
1. V_GS = 0 V
200
C
2. f = 1 MHz
rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10¹
10⁰
10^-1
2
150℃
25℃
-55℃
※ Notes :
1. V_DS = 50V
2. 250μs Pulse Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃ 25℃
※ Notes :
1. V_GS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 50V
DS
10
V = 125V
DS
V = 200V
DS
8
6
4
2
※ Note : I_D = 8.0 A
0
0
3
6
9
12
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, May 2000