FQP70N08 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 80V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
10²
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10¹
10⁰
10^-1
※ Notes :
1. 250μs Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
V = 10V
GS
V = 20V
GS
※ Note : T_J = 25℃
70
140
210
280
350
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
6000
5000
4000
3000
2000
1000
0
10^-1
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C
iss
C
oss
C_rss
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10²
10¹
175℃
25℃
10⁰
10^-1
2
-55℃
※ Notes :
1. V_DS = 30V
2. 250μs Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10²
10¹
10⁰
10^-1
0.2
175℃
25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 40V
DS
V = 64V
8
DS
6
4
2
※ Note : I = 70A
D
0
0
10
20
30
40
50
60
70
80
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, August 2000