FQP6N80C Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 800V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10¹
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10⁰
10^-1
10^-2
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
6
5
V = 10V
GS
4
3
V = 20V
GS
2
※ Note : T_J = 25℃
1
0
3
6
9
12
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1500
1200
C_iss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
900
600
300
0
10^-1
C
oss
C
rss
※ Notes ;
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
10¹
10⁰
10^-1
2
150^oC
25^oC
-55^oC
※ Notes :
1. V_DS = 50V
2. 250μ s Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 160V
10
V_DS = 400V
V = 640V
DS
8
6
4
2
※ Note : I_D = 6.0A
0
0
5
10
15
20
25
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, June 2003