FQP6N50C Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
10¹ Top :
V_GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10^{0 Bottom : 5.0 V}
10^-1
10^-1
? Notes :
1. 250탎 Pulse Test
2. T_C = 25?
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.5
3.0
V_GS = 10V
2.5
2.0
1.5
V_GS = 20V
1.0
※ Note : T_J = 25℃
0.5
0
5
10
15
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
1200
1000
800
600
C_iss
C_oss
CCC_iorssssss===CCC_ggdsds++CC_ggdd(C_ds = shorted)
400
C_rss
※ Note ;
1.
2.
fV=^GS1=M0HVz
200
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
150^oC
25^oC
10⁰
-55^oC
10^-1
2
※ Notes :
1. V_DS = 40V
2. 250µ s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25_{GS0µ=s0VPulse}
Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
V_DS = 100V
8
V_DS = 250V
V_DS = 400V
6
4
2
? Note : I_D = 5.5A
0
0
5
10
15
20
Q_G, Total Gate Charge [nC]
FQP6N50C Rev. A
3
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