 English |
|
|
|
|
|
|
|
| FQP58N08 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 80V N-Channel MOSFET | |||
| |||
| ◁ |
Typical Characteristics
VGS
Top : 15.0 V
102
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
â» Notes :
1. 250μs Pulse Test
2. T = 25â
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
100
80
V = 10V
GS
60
V = 20V
GS
40
20
â» Note : TJ = 25â
0
0
50
100
150
200
250
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
C
rss
â» Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
102
101
175â
25â
100
10-1
2
-55â
â» Notes :
1. VDS = 30V
2. 250μs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
10-1
0.2
175â
25â
â» Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 40V
V = 64V
DS
8
6
4
2
â» Note : ID = 57.5A
0
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2, December 2000
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese