 English |
|
|
|
|
|
|
|
| FQP55N10 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 100V N-Channel MOSFET | |||
| |||
| ◁ |
Typical Characteristics
VGS
Top : 15.0 V
102
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
â» Notes :
1. 250μs Pulse Test
2. TC = 25â
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.12
0.09
V = 10V
GS
0.06
V = 20V
GS
0.03
0.00
0
â» Note : TJ = 25â
60
120
180
240
300
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
6000
5000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
3000
2000
1000
Ciss
Coss
Crss
â» Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
102
101
175â
25â
100
10-1
2
-55â
â» Notes :
1. VDS = 40V
2. 250μs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
10-1
0.2
175â
0.4
25â
â» Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 50V
DS
V = 80V
DS
8
6
4
2
â» Note : ID = 55A
0
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, August 2000
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese