FQP3N25 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 250V N-Channel MOSFET

Typical Characteristics
10¹
Top :
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
10^{0 Bottom : 5.5 V}
10^-1
10^-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
10
8
V = 10V
GS
6
V = 20V
GS
4
2
0
0
1
2
3
4
5
6
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
300
250
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
200
C_iss
150
C_oss
100
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
50
C
rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10¹
10⁰
150℃
10^-1
10^-2
2
25℃
-55℃
※ Notes :
1. V_DS = 50V
2. 250μs Pulse Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1. V_GS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 50V
DS
10
V = 125V
DS
V = 200V
DS
8
6
4
2
※ Note : I_D = 2.8 A
0
0
1
2
3
4
5
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, November 2000