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| FQP32N20C Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 200V N-Channel MOSFET | |||
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Typical Characteristics
102
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
â» Notes :
1. 250µ s Pulse Test
2. TC = 25â
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.3
0.2
VGS = 10V
0.1
VGS = 20V
â» Note : TJ = 25â
0.0
0
20
40
60
80
100
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
6000
5000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
Ciss
3000
Coss
2000
Crss
1000
â» Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2004 Fairchild Semiconductor Corporation
102
101
150oC
25oC
100
-55oC
10-1
2
â» Notes :
1. VDS = 40V
2. 250µ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
10-1
0.0
150â
25â
â» Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4
0.8
1.2
1.6
2.0
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 40V
10
VDS = 100V
8
VDS = 160V
6
4
2
â» Note : ID = 32.0A
0
0
20
40
60
80
100
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, March 2004
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