FQP27P06 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 60V P-Channel MOSFET

Typical Characteristics
10²
Top :
V
GS
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
10¹ Bottom : - 4.5 V
10⁰
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.24
0.20
0.16
V = - 10V
GS
0.12
V = - 20V
GS
0.08
0.04
※ Note : T_J = 25℃
0.00
0 10 20 30 40 50 60 70 80 90 100 110 120 130
-I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
0
10^-1
Coss
Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
10⁰
10¹
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
10²
10¹
175℃
10^{0 25℃}
10^-1
2
-55℃
※ Notes :
1. V_DS = -30V
2. 250μ s Pulse Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10²
10¹
10⁰
175℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
10^-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -30V
DS
8
V = -48V
DS
6
4
2
※ Note : I_D = -27 A
0
0
5
10
15
20
25
30
35
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2. May 2001