FQP24N08 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 80V N-Channel MOSFET

Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
10¹
5.5 V
5.0 V
Bottom : 4.5 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μs Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.20
0.16
V_GS = 10V
0.12
V_GS = 20V
0.08
0.04
0.00
0
※ Note : T_J = 25℃
20
40
60
80
100
I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1600
1400
1200
1000
800
600
400
200
0
10^-1
C_oss
C_iss
C_rss
C_iss = C_gs + C_gd (C_ds = shorted)
C =C +C
oss
ds
gd
C =C
rss
gd
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10¹
175℃
10⁰
10^-1
2
25℃
-55℃
※ Notes :
1. V_DS = 30V
2. 250μs Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
175℃ 25℃
※ Notes :
1. V_GS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 40V
DS
V_DS = 64V
8
6
4
2
※ Note : I_D = 24A
0
0
2
4
6
8 10 12 14 16 18 20
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, August 2000