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FQP20N06 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 60V N-Channel MOSFET | |||
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
101
100
10-1
â» Notes :
1. 250μ s Pulse Test
2. TC = 25â
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
100
80
V = 10V
GS
60
V = 20V
GS
40
20
â» Note : TJ = 25â
0
0
10
20
30
40
50
60
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
800
C
oss
C
iss
400
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
â» Notes :
1. V = 0 V
GS
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
175â
25â
10-1
2
-55â
â» Notes :
1. V =25V
2. 25DS0μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
175â
0.4
25â
â» Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 30V
DS
V = 48V
DS
8
6
4
2
â» Note : I = 20A
D
0
0
2
4
6
8
10
12
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
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