FQP1P50 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 500V P-Channel MOSFET

Typical Characteristics
Top :
V_GS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
10⁰
-6.5 V
-6.0 V
Bottom : -5.5 V
10^-1
10^-2
10^-1
※ Notes :
1. 250μs Pulse Test
2. T_C = 25℃
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
16
14
V = - 10V
GS
12
V = - 20V
GS
10
8
※ Note : T_J = 25℃
6
0
1
2
3
4
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
600
500
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
400
C_iss
300
C
oss
200
※ Notes :
1. V_GS = 0 V
C
2. f = 1 MHz
rss
100
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10⁰
10^-1
2
150℃
25℃
-55℃
※ Notes :
1. V_DS = -50V
2. 250μs Pulse Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.0
150℃ 25℃
※ Notes :
1. V_GS = 0V
2. 250μs Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -100V
10
DS
V = -250V
DS
8
V = -400V
DS
6
4
2
※ Note : I_D = -1.5 A
0
0
2
4
6
8
10
12
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. A, June 2000