FQP17N08 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 80V N-Channel MOSFET

Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
10¹
5.0 V
Bottom : 4.5 V
10⁰
10^-1
※ Note :
1. 250μs Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.4
0.3
V = 10V
GS
V = 20V
GS
0.2
0.1
※ Note : T = 25℃
J
0.0
0
10
20
30
40
50
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
900
750
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
600
C
※ Notes :
450
iss
1. V_GS = 0 V
C
2. f = 1 MHz
oss
300
C_rss
150
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10¹
175℃
10⁰ _25℃
10^-1
2
-55℃
※ Notes :
1. V_DS = 30V
2. 250μs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
175℃
25℃
※ Notes :
1. V_GS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 40V
DS
V_DS = 64V
8
6
4
2
※ Note : I_D = 16.5A
0
0
2
4
6
8
10
12
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, January 2001