FQP12N60C Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – FQP12N60C/FQPF12N60C

Typical Characteristics
V
Top : 15.0^GSV
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
10¹ Bottom : 4.5 V
※ Notes :
10⁰
1. 250μ s Pulse Test
2. T = 25℃
C
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.5
V = 10V
GS
1.0
0.5
0
V_GS = 20V
※ Note : T_J = 25℃
5
10
15
20
25
30
35
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3500
3000
2500
2000
1500
1000
500
0
10^-1
C_iss
C
oss
C_rss
C = C + C (C = shorted)
iss gs gd ds
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes ;
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
10¹
150^oC
25^oC
10⁰
-55^oC
10^-1
2
※ Notes :
1.
2.
V25_DS0μ=
40V
s Pulse
Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5^GS0μ^=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 120V
DS
10
V = 300V
DS
8
V_DS = 480V
6
4
2
※ Note : I_D = 12A
0
0
10
20
30
40
50
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, October 2003