FQH18N50V2 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

Typical Characteristics
Top :
V_GS
15.0 V
10.0 V
8.0 V
10¹
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
0
V_GS = 10V
V_GS = 20V
※ Note : T_J = 25℃
10
20
30
40
50
60
70
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
7000
6000
5000
4000
3000
2000
1000
0
10^-1
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_oss
C_iss
C_rss
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
10¹
150℃
10⁰
10^-1
2
25℃
-55℃
※ Notes :
1. V_DS = 40V
2. 250μ s Pulse Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃ 25℃
※ Notes :
1. V_GS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V_DS = 100V
10
V_DS = 250V
V_DS = 400V
8
6
4
2
※ Note : I_D = 18A
0
0
5
10
15
20
25
30
35
40
45
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. A, December 2003