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| FQH140N10 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 100V N-Channel MOSFET | |||
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Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
102
5.0 V
Bottom : 4.5 V
101
10-1
â» Notes :
1. 250μ s Pulse Test
2. T = 25â
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
30
25
20
V = 10V
GS
V = 20V
15
GS
10
5
â» Note : TJ = 25â
0
0 100 200 300 400 500 600 700 800 900
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
10-1
C
oss
C
iss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
â» Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101
175â
25â
100
10-1
2
-55â
â» Notes :
1. VDS = 40V
2. 250μ s Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
102
101
100
175â
10-1
0.2 0.4
25â
â» Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 50V
8
V = 80V
DS
6
4
2
â» Note : ID = 140 A
0
0
40
80
120
160
200
240
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
Rev. A, August 2003
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