FQE10N20LC Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 200V Logic N-Channel MOSFET

Typical Characteristics
10^{1 Top :}
V
GS
10.0 V
8.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
Bottom : 2.5 V
10⁰
10^-1
10^-1
※ Notes :
1. 250µ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.0
0.8
V_GS = 5V
0.6
0.4
V_GS = 10V
0.2
※ Note : T_J = 25℃
0.0
0
5
10
15
20
25
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1400
1200
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
1000
800
600
400
※ Notes :
200
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
C_iss
C_oss
C_rss
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2004 Fairchild Semiconductor Corporation
10¹
150^oC
10⁰
25^oC
-55^oC
10^-1
0
※ Notes :
1. V = 30V
DS
2. 250µ s Pulse Test
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1. V_GS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 40V
10
V_DS = 100V
8
V_DS = 160V
6
4
2
※ Note : I_D = 9.5A
0
0
4
8
12
16
20
24
28
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, March 2004