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FODB100V Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Single Channel Microcoupler
Electrical Characteristics (TA = 25°C Unless otherwise specified)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Min.
EMITTER
VF
Forward Voltage
IF = 2mA
1.0
IR
Reverse Current
VR = 6V
DETECTOR
BVCEO Breakdown Voltage
IC = 100µA, IF = 0
75
Collector to Emitter
BVECO Emitter to Collector
IE = 100µA, IF = 0
7
ICEO
Collector Dark Current(1) VCE = 75V, IF = 0
CCE
Capacitance
VCE = 0V, f = 1MHz
Typ.
8
Max.
1.5
10
100
Unit
V
µA
V
V
nA
pF
Transfer Characteristics
Symbol
Characteristic
Test Conditions
CTR
Current Transfer Ratio(2) IF = 1mA, VCE = 5V
CTRCE(SAT) Saturated Current Transfer IF = 1.6mA, VCE = 0.4V
Ratio (Collector to Emitter) IF = 1.0mA, VCE = 0.4V
VCE (SAT) Saturation Voltage
IF = 3.0mA, IC = 1.8mA
IF = 1.6mA, IC = 1.6mA
tr
Rise Time (Non-Saturated) IC = 2mA, VCE = 5 V, RL = 1kΩ
tf
Fall Time (Non-Saturated) IC = 2mA, VCE = 5 V, RL = 1kΩ
TPHL
Propagation Delay
High to Low
IF = 1.6mA, VCC = 5.0 V, RL = 750Ω
IF = 1.6mA, VCC = 5.0 V, RL = 4.7kΩ
TPLH
Propagation Delay
Low to High
IF = 1.6mA, VCC = 5.0 V, RL = 750Ω
IF = 1.6mA, VCC = 5.0 V, RL = 4.7kΩ
Min. Typ. Max. Unit
100
%
100
%
75
0.4 V
1
µs
5
3
µs
12
5
µs
19
Isolation Characteristics
Symbol
Characteristic
Test Conditions
VISO
RISO
CISO
Steady State Isolation Voltage(3) RH ≤ 50%, TA = 25°C, t = 1 sec
Resistance (input to output)(3) VI-O = 500VDC
Capacitance (input to output)(3) f = 1MHz
Min.
2500
1012
Typ.
0.3
Max. Unit
V(rms)
Ω
0.5
pF
Notes:
1. The white dome area is sensitive to high intensity ambient light or any light source in the 500nm to 1200nm
wavelength range. If such a light source is present, the part should be covered or protected. If the white dome is
exposed to such a light source, the output leakage parameter of the phototransistor will increase.
2. CTR bin (FODB100 only)
FODB101: 100% – 200%
FODB102: 150% – 300%
3. Pin 1 and Pin 2 are shorted as input and Pin 3 and Pin 4 are shorted as output.
3
FODB100, FODB101, FODB102 Rev. 1.0.0
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