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FOD852S Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 4-Pin High Operating Temperature Photodarlington Optocoupler
Electrical Characteristics (TA = 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
INPUT
VF
IR
Ct
OUTPUT
Forward Voltage
Reverse Current
Terminal Capacitance
IF = 10mA
VR = 4V
V = 0, f = 1kHz
ICEO
BVCEO
BVECO
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
VCE = 200V, IF = 0
IC = 0.1mA, IF = 0
IE = 10µA, IF = 0
Min. Typ. Max. Unit
1.2
1.4
V
10
µA
30
250 pF
200 nA
300
V
0.1
V
Transfer Characteristics
Symbol DC Characteristic
Test Conditions
IC
CTR
Collector Current
Current Transfer Ratio(1)
IF = 1mA, VCE = 2V
VCE (sat) Collector-Emitter Saturation IF = 20mA, IC = 100mA
Voltage
Riso Isolation Resistance
Cf Floating Capacitance
fC
Cut-Off Frequency
tr
Response Time (Rise)
tf
Response Time (Fall)
DC500V 40~60% R.H.
V = 0, f = 1MHz
VCE = 2V, IC = 20mA, RL = 100Ω, -3dB
VCE = 2V, IC = 20mA, RL = 100Ω
Min.
10
1,000
Typ. Max. Unit
40 1 f0 mA
4,000 15,000 %
1.2
V
5x1010 1x1011
Ω
0.6
1
pF
1
7
kHz
100 300 µs
20 100 µs
Isolation Characteristics
Symbol Characteristic
Test Conditions
VISO Input-Output Isolation f = 60Hz, t = 1 min, II-O ≤ 2µA
Voltage
RISO
CISO
Isolation Resistance VI-O = 500 VDC
Isolation Capacitance VI-O = 0, f = 1MHz
Note:
1. Current Transfer Ratio (CTR) = IC/IF x 100%.
Min.
5000
5 x 1010
Typ.
1011
0.6
Max. Units
Vac(rms)
–
Ω
1.0
pf
©2006 Fairchild Semiconductor Corporation
FOD852 Rev. 1.2.1
3
www.fairchildsemi.com