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FOD8523SD Datasheet, PDF (3/13 Pages) Fairchild Semiconductor – 4-Pin High Operating Temperature Photodarlington Optocoupler
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Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
Parameter
Input
VF
IR
Ct
Output
Forward Voltage
Reverse Current
Terminal Capacitance
ICEO
BVCEO
BVECO
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Test Conditions
IF = 10 mA
VR = 4 V
V = 0, f = 1 kHz
VCE = 200 V, IF = 0
IC = 0.1 mA, IF = 0
IE = 10 µA, IF = 0
Min. Typ. Max. Unit
1.2
1.4
V
10
µA
30
250 pF
200 nA
300
V
0.1
V
Transfer Characteristics
Symbol DC Characteristic
Test Conditions
IC
CTR
Collector Current
IF = 1 mA, VCE = 2 V
Current Transfer Ratio(1)
VCE(SAT) Collector-Emitter
Saturation Voltage
IF = 20 mA, IC = 100 mA
RISO Isolation Resistance
DC = 5000 V,
40% to 60% Relative Humidity
CF Floating Capacitance V = 0, f = 1 MHz
fC
Cut-Off Frequency
VCE = 2 V, IC = 20 mA, RL = 100 Ω, -3 dB
tR
Response Time (Rise) VCE = 2 V, IC = 20 mA, RL = 100 Ω
tF
Response Time (Fall)
Min.
10
1,000
Typ. Max. Unit
40 150 mA
4,000 15,000 %
1.2
V
5x1010 1x1011
Ω
0.6
1
pF
1
7
kHz
100 300 µs
20 100 µs
Isolation Characteristics
Symbol Characteristic
Test Conditions
VISO Input-Output Isolation f = 60 Hz, t = 1 minute, II-O ≤ 2 µA
Voltage
RISO
CISO
Isolation Resistance VI-O = 500 VDC
Isolation Capacitance VI-O = 0, f = 1 MHz
Note:
1. Current Transfer Ratio (CTR) = IC / IF x 100%.
Min.
5000
5 x 1010
Typ.
1011
0.6
Max.
Units
VAC(RMS)
Ω
1.0
pf
©2006 Fairchild Semiconductor Corporation
FOD852 Rev. 1.2.2
3
www.fairchildsemi.com
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