FOD817B300W Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – 4-Pin High Operating Temperature Phototransistor Optocouplers

Electrical Characteristics (T_A = 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Device Test Conditions
EMITTER
V_F
Forward Voltage
I_R
Reverse Leakage Current
C_t
Terminal Capacitance
FOD814
FOD817
FOD817
FOD814
FOD817
I_F = ±20mA
I_F = 20mA
V_R = 4.0V
V = 0, f = 1kHz
V = 0, f = 1kHz
DETECTOR
I_CEO Collector Dark Current
BV_CEO
BV_ECO
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
FOD814
FOD817
FOD814
FOD817
FOD814
FOD817
V_CE = 20V, I_F = 0
V_CE = 20V, I_F = 0
I_C = 0.1mA, I_F = 0
I_C = 0.1mA, I_F = 0
I_E = 10µA, I_F = 0
I_E = 10µA, I_F = 0
Min.
70
70
6
6
Typ.*
1.2
1.2
50
30
Max.
1.4
1.4
10
250
250
100
100
Unit
V
µA
pF
nA
V
V
DC Transfer Characteristics
DC
Symbol Characteristic
CTR Current Transfer
Ratio
Device
FOD814
FOD814A
FOD817
FOD817A
Test Conditions
I_F = ±1mA, V_CE = 5V⁽¹⁾
I_F = 5mA, V_CE = 5V⁽¹⁾
FOD817B
FOD817C
FOD817D
V_{CE (sat)} Collector-Emitter
Saturation Voltage
FOD814 I_F = ±20mA, I_C = 1mA
FOD817 I_F = 20mA, I_C = 1mA
Min.
20
50
50
80
130
200
300
Typ.* Max. Unit
300 %
150
600
160
260
400
600
0.1 0.2 V
0.1 0.2
AC Transfer Characteristics
Symbol AC Characteristic
f_C Cut-Off Frequency
t_r Response Time (Rise)
t_f Response Time (Fall)
Device
FOD814
FOD814,
FOD817
FOD814,
FOD817
Test Conditions
V_CE = 5V, I_C = 2mA, R_L = 100Ω,
-3dB
V_CE = 2 V, I_C = 2mA, R_L = 100Ω⁽²⁾
*Typical values at T_A = 25°C
Min. Typ.* Max. Unit
15
80
kHz
4
18 µs
3
18 µs
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
3
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