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FOD814_06 Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – 4-Pin High Operating Temperature Phototransistor Optocouplers
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Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol Parameter
Device Test Conditions
EMITTER
VF
Forward Voltage
IR
Reverse Leakage Current
Ct
Terminal Capacitance
FOD814
FOD617
FOD817
FOD617
FOD817
FOD814
FOD617
IF = ±20mA
IF = 60mA
IF = 20mA
VR = 6.0V
VR = 4.0V
V = 0, f = 1kHz
V = 0, f = 1kHz
FOD817 V = 0, f = 1kHz
DETECTOR
ICEO Collector Dark Current
BVCEO Collector-Emitter Breakdown
Voltage
BVECO Emitter-Collector Breakdown
Voltage
FOD814
FOD617C/D
FOD617A/B
FOD817
FOD814
FOD617
FOD817
FOD814
FOD617
FOD817
VCE = 20V, IF = 0
VCE = 10V, IF = 0
VCE = 10V, IF = 0
VCE = 20V, IF = 0
IC = 0.1mA, IF = 0
IC = 100µA, IF = 0
IC = 0.1mA, IF = 0
IE = 10µA, IF = 0
IE = 10µA, IF = 0
IE = 10µA, IF = 0
Min.
–
–
–
–
–
–
–
–
–
–
–
–
70
70
70
6
7
6
Typ.*
1.2
1.35
1.2
0.001
–
50
30
30
–
1
1
–
–
–
–
–
–
–
Max.
1.4
1.65
1.4
10
10
250
250
250
100
100
50
100
–
–
–
–
–
–
Unit
V
µA
pF
nA
V
V
Transfer Characteristics (TA = 25°C Unless otherwise specified.)
Symbol DC Characteristic Device
Test Conditions
CTR Current Transfer
Ratio
FOD814 IF = ±1mA, VCE = 5V(1)
FOD814A
FOD617A IF = 10mA, VCE = 5V(1)
FOD617B
FOD617C
FOD617D
FOD617A
FOD617B
IF = 1mA, VCE = 5V(1)
FOD617C
FOD617D
FOD817
FOD817A
IF = 5mA, VCE = 5V(1)
FOD817B
FOD817C
FOD817D
VCE (sat) Collector-Emitter
Saturation Voltage
FOD814
FOD617
FOD817
IF = ±20mA, IC = 1mA
IF = 10mA, IC = 2.5mA
IF = 20mA, IC = 1mA
*Typical values at TA = 25°C
Min.
20
50
40
63
100
160
13
22
34
56
50
80
130
200
300
–
–
–
Typ.* Max. Unit
– 300 %
– 150
–
80
– 125
– 200
– 320
–
–
–
–
–
–
–
–
– 600
– 160
– 260
– 400
– 600
0.1 0.2 V
–
0.4
0.1 0.2
3
FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
www.fairchildsemi.com
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