FOD617 Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – 4-Pin Phototransistor Optocouplers

Electrical/Characteristics (T_A = 25°C Unless otherwise specified.)
Individual Component Characteristics
Parameter
Device Test Conditions Symbol Min Typ* Max Unit
EMITTER
Forward Voltage
Reverse Leakage Current
Terminal Capacitance
FOD814
(I_F = ±20 mA)
V_F
FOD617
(I_F = 60 mA)
FOD817
(I_F = 20 mA)
FOD617
(V_R = 6.0 V)
I_R
FOD817
(V_R = 4.0 V)
FOD814 (V = 0, f = 1 kHz)
C_t
FOD617 (V = 0, f = 1 kHz)
FOD817 (V = 0, f = 1 kHz)
—
1.2
1.4
V
— 1.35 1.65
—
1.2
1.4
— 0.001 10
µA
—
—
10
—
50
250 pF
—
30
250
—
30
250
DETECTOR
Collector Dark Current
FOD814
FOD617C/
D
FOD617A/
B
FOD817
(V_CE = 20 V, I_F = 0)
(V_CE = 10 V, I_F = 0)
(V_CE = 10 V, I_F = 0)
(V_CE = 20 V, I_F = 0)
I_CEO
—
—
100 nA
—
1
100
—
1
50
—
—
100
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
FOD814 (I_C = 0.1 mA, I_F = 0) BV_CEO
70
—
—
V
FOD617 (I_C = 100 µA, I_F = 0)
70
—
—
FOD817 (I_C = 0.1 mA, I_F = 0)
70
—
—
FOD814 (I_E = 10 µA, I_F = 0) BV_ECO
6
—
—
V
FOD617 (I_E = 10 µA, I_F = 0)
7
—
—
FOD817 (I_E = 10 µA, I_F = 0)
6
—
—
Transfer Characteristics (T_A = 25°C Unless otherwise specified.)
DC Characteristic Device
Test Conditions
Symbol Min
Current Transfer
Ratio
FOD814
FOD814A
I_F = ±1 mA, V_CE = 5 V¹
CTR
20
50
FOD617A
I_F = 10 mA, V_CE = 5 V¹
40
FOD617B
63
FOD617C
100
FOD617D
160
FOD617A
I_F = 1 mA, V_CE = 5 V¹
13
FOD617B
22
FOD617C
34
FOD617D
56
FOD817
I_F = 5 mA, V_CE = 5 V¹
50
FOD817A
80
FOD817B
130
FOD817C
200
FOD817D
300
Collector-Emitter FOD814
Saturation Voltage _FOD617
I_F = ±20 mA, I_C = 1 mA
I_F = 10 mA, I_C = 2.5 mA
V_{CE (sat)} —
—
FOD817
I_F = 20 mA, I_C = 1 mA
—
Cut-Off Frequency FOD814 V_CE = 5 V, I_C = 2 mA, R_L = 100 Ω, -3dB f_C
15
Typ*
—
Max Unit
300 %
150
80
125
200
320
— 600
— 160
— 260
— 400
— 600
0.1 0.2 V
— 0.4
0.1 0.2
80 — KHz
*Typical values at T_A = 25°C
3
FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2
www.fairchildsemi.com