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FMM7G30US60N Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – Compact & Complex Module
Electrical Characteristics of DIODE @ Inverter & Brake TC = 25°C unless otherwise noted
Symbol
VFM
Parameter
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
Test Conditions
IF = 30A
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
IF = 30A
di / dt = 60 A/us
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
2.0
2.0
90
130
2.2
3.4
400
880
Max.
2.8
--
180
--
3.4
--
600
--
Units
V
ns
A
nC
Electrical Characteristics of DIODE @ Converter TC = 25°C unless otherwise noted
Symbol
VFM
Parameter
Diode Forward Voltage
IRRM
Repetitive Reverse Current
Test Conditions
IF = 30A
TC = 25°C
TC = 100°C
VR = VRRM
TC = 25°C
TC = 100°C
Min.
--
--
--
--
Typ.
1.1
1.0
--
5
Max.
1.5
--
8
--
Units
V
mA
Thermal Characteristics
Inverter
Brake
Converter
Weight
Symbol
RθJC
RθJC
RθJC
RθJC
RθJC
Parameter
Junction-to-Case (IGBT Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Junction-to-Case (IGBT Part)
Junction-to-Case (DIODE Part)
Junction-to-Case (DIODE Part, per 1/6 Module)
Weight of Module
Typ.
--
--
--
--
--
210
Max.
1.2
1.5
1.2
1.5
1.3
--
Units
°C/W
°C/W
°C/W
°C/W
°C/W
g
NTC Thermistor Characteristics
Thermistor
Symbol
R25
R100
B(25/100)
Parameter
Rated Resistance @ Tc = 25°C
Rated Resistance @ Tc = 100 °C
B - Value
Tol.
+/- 5 %
+/- 5 %
+/- 3 %
Typ.
5.0
0.415
3692
Units
KΩ
KΩ
©2003 Fairchild Semiconductor Corporation
FMM7G30US60N Rev. A