FMG1G75US60H Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – Molding Type Module

Electrical Characteristics of DIODE T_C = 25°C unless otherwise noted
Symbol
Parameter
V_FM
Diode Forward Voltage
t_rr
Diode Reverse Recovery Time
I_rr
Diode Peak Reverse Recovery
Current
Q_rr
Diode Reverse Recovery Charge
Test Conditions
I_F = 75A
T_C = 25°C
T_C = 100°C
T_C = 25°C
T_C = 100°C
I_F = 75A
di / dt = 150 A/us
T_C = 25°C
T_C = 100°C
T_C = 25°C
T_C = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.9
1.8
90
130
7
10
315
650
Max.
2.8
--
130
--
9
--
590
--
Units
V
ns
A
nC
Thermal Characteristics
Symbol
R_θJC
R_θJC
R_θCS
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink (Conductive grease applied)
Weight of Module
Typ.
--
--
0.05
--
Max.
0.4
0.9
--
190
Units
°C/W
°C/W
°C/W
g
©2002 Fairchild Semiconductor Corporation
FMG1G75US60H Rev. A