FGI40N60SF Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 600V, 40A Field Stop IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
120
T_C = 25^oC
100
20V
15V
80
12V
60
40
20
0
0.0
10V
V_GE = 8V
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
80
Common Emitter
V_GE = 15V
60
T_C = 25^oC
T_C = 125^oC
40
20
Figure 2. Typical Output Characteristics
120
T_C = 125^oC
100
20V
15V
12V
80
60
10V
40
20
0
0.0
V_GE = 8V
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
120
Common Emitter
V_CE = 20V
T_C = 25^oC
T_C = 125^oC
80
40
0
0
1
2
3
4
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4.0
Common Emitter
V_GE = 15V
3.5
80A
3.0
2.5
40A
2.0
I_C = 20A
1.5
1.0
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
0
6
8
10
12 13
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = -40^oC
16
12
8
80A
4
40A
I_C = 20A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGI40N60SF Rev. A
3
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