FDS8984F085 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

Typical Characteristics T_J = 25°C unless otherwise noted
30
V =10V PULSE DURATION =80µS
GS
DUTY CYCLE =0.5% MAX
V =5.0V
GS
V =3.5V
GS
20
V =4.5V
GS
V =4.0V
GS
10
V =3.0V
GS
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On Region Characteristics
3.0
2.5
V =3.0V
GS
PULSE DURATION =80µS
DUTY CYCLE =0.5% MAX
2.0
V =3.5V
GS
V
=4.0V
V =4.5V
GS
1.5
GS
1.0
V =5.0V
GS
V =10V
GS
0.5
5
10
15
20
25
30
I , DRAIN CURRENT (A)
D
Figure 2. On-Resistance vs Drain Current and
Gate Voltage
1.6
I_D = 7A
V_GS = 10V
1.4
1.2
1.0
0.8
0.6
-80
-40
0
40
80 120 160
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On Resistance vs Temperature
60
55
50
45
40
35
30
25
20
15
2
I_D = 7A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
T_J = 125^oC
T_J = 25^oC
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to Source
Votlage
30
PULSE DURATION =80µS
DUTY CYCLE =0.5% MAX
25
V_DD = 5V
20
T = 150^OC
J
15
10
T = 25OC
J
5
T = - 55^OC
J
0
1
2
3
4
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics
30
10 ^{VGS = 0V}
1
T_J = 150^oC
T_J = 25^oC
0.1
0.01
T_J = -55^oC
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
FDS8984_F085 Rev. A
3
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