FDS8958 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench MOSFET

Electrical Characteristics (continued)
T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
Q1
Q1
VDD = 10 V, ID = 1 A,
Q2
tr
Turn-On Rise Time
VGS = 10V, RGEN = 6 Ω
Q1
Q2
td(off)
Turn-Off Delay Time
Q2
Q1
VDD = -10 V, ID = -1 A,
Q2
tf
Turn-Off Fall Time
VGS = -10V, RGEN = 6 Ω
Q1
Q2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Q1
Q1
VDS = 15 V, ID = 7 A, VGS = 10 V
Q2
Q1
Q2
Q2
VDS = -15 V, ID = -5 A,VGS = -10 V
Q1
Q2
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A
(Note 2) Q1
Voltage
VGS = 0 V, IS = -1.3 A
(Note 2) Q2
6
12 ns
6.7 13.4
10 18 ns
9.7 19.4
18 29 ns
19.8 35.6
5
12 ns
12.3 22.2
16 26 nC
14 23
2.5
nC
2.2
2.1
nC
1.9
1.3 A
-1.3
0.74 1.2 V
-0.76 -1.2
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design.
a) 78°/W when
mounted on a
0.5 in² pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 125°/W when
mounted on a .02 in²
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
FDS8958 Rev A(W)