FDS8926A Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Dual N-Channel Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics
30 _{VGS = 4.5V 3.0V}
25
3.5V
2.5V
20
2.0V
15
10
1.5V
5
0
0
0.5
1
1.5
2
2.5
3
V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
I_D = 5.5 A
1.6 _{VGS = 4.5 V}
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation With
Temperature.
20
V_DS =5V
16
12
T_A = -55°C
25°C
125°C
8
4
0
0
0.5
1
1.5
2
2.5
3
V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 5 . Transfer Characteristics.
1.8
1.6
V_GS = 2.0V
1.4
1.2
1
2.5V
3.0V
3.5V
4.5V
0.8
0
5
10
15
20
25
I _D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.1
0.075
I_D = 2.8A
0.05
T_A = 125°C
0.025
T_A = 25°C
0
1
2
3
4
5
V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
V GS = 0V
1
0.1
0.01
TA= 125°C
25°C
-55°C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V_SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS8926A Rev.B