FDS7766 Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

Typical Characteristics
60
V_GS = 10V
3.5V
50
4.5V
3.0V
40
30
20
2.5V
10
0
0
0.25
0.5
0.75
1
1.25
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
1.6
I_D = 17A
V_GS = 10V
1.4
1.2
1
0.8
0.6
-50 -25
0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation
withTemperature.
60
V_DS = 5.0V
50
40
30
T_A = 125^oC
20
25^oC
10
-55^oC
0
1.5
2
2.5
3
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
V_GS = 3.0V
3.5V
4.0V
4.5V
6.0V
10V
10
20
30
40
50
60
I_D, DIRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.014
0.012
I_D = 8.5A
0.01
0.008
0.006
T_A = 125^oC
0.004
0.002
T_A = 25^oC
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V_GS = 0V
10
1
T_A = 125^oC
0.1
0.01
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7766 Rev E (W)