FDS6678A Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

Typical Characteristics
20
V_GS = 10V
4.5V
3.5V
15
3.0V
2.5V
10
5
2.0V
0
0
0.5
1
1.5
2
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
1.8
ID = 6.8A
VGS = 4.5V
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation
withTemperature.
35
30
25
20
15
10
5
0
1
V_DS = 5V
T_A = -55^oC
25^oC
125^oC
1.5
2
2.5
3
3.5
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.4
1.3
1.2
1.1
1
0.9
0.8
0
VGS = 3.0V
3.5V
4.0V
4.5V
5.0V
6.0V
10V
5
10
15
20
25
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.06
0.05
0.04
0.03
0.02
0.01
0
2
ID = 3.8 A
TA = 125^oC
TA = 25^oC
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V_GS = 0V
10
1
0.1
T_A = 125^oC
25^oC
-55^oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6678A Rev C(W)