FDS6298_07 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – 30V N-Channel Fast Switching PowerTrench MOSFET

Typical Characteristics
80
V_GS = 10V
70
6.0V
60
4.5V
4.0V
3.5.V
50
40
30
3.0V
20
10
0
0
0.5
1
1.5
2
2.5
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
I_D = 13A
V_GS = 10V
1.6
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
80
V_DS = 5V
70
60
50
40
T_A = -55^oC
25^oC
125^o
C
30
20
10
0
1.5
2
2.5
3
3.5
4
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.6
2.4
V_GS = 3.0V
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
10
3.5V
4.0V
4.5V
5.0V
6.0V
10V
20
30
40
50
60
70
80
I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.028
0.024
I_D = 6.5A
0.02
0.016
0.012
T_A = 125^oC
0.008
0.004
2
T_A = 25^oC
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V_GS = 0V
10
1
0.1
0.01
T_A = 125^oC
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6298 Rev. C1 (W)