FDS4141 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – P-Channel PowerTrench® MOSFET -40V, -10.8A, 13.0mΩ

Typical Characteristics T_J = 25°C unless otherwise noted
36
V_GS = -3.5V
V_GS = -4V
27
V_GS = - 4.5V
V_GS = -10V
18
V_GS = -3V
9
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
4.0
3.5
V_GS = -3V
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
2.5
2.0
1.5
1.0
0.5
0
V_GS = -3.5V
V_GS = -4V
9
18
-I_D, DRAIN CURRENT(A)
V_GS = - 4.5V
V_GS = -10V
27
36
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
I_D = -10.5A
1.6 ^{VGS = -10V}
1.4
1.2
1.0
0.8
0.6
-75
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
50
I_D = -10.5A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
30
T_J = 125^oC
20
10
T_J = 25^oC
0
2
4
6
8
10
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
36
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
27
V_DS = -5V
18
T_J = 150^oC
T_J = 25^oC
9
T_J = -55^oC
0
0
1
2
3
4
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
V_GS = 0V
10
1
0.1
0.01
T_J = 150^oC
T_J = 25^oC
T_J = -55^oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation
3
FDS4141 Rev.C
www.fairchildsemi.com