FDS3812 Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – 80V N-Channel Dual PowerTrench MOSFET

Typical Characteristics
20
V_GS = 10V
6.0V
15
5.0V
4.5V
10
4.0V
5
0
0
1
2
3
4
5
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.5
I_D = 3.4A
2.2
V_GS =10V
1.9
1.6
1.3
1
0.7
0.4
-50 -25
0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
20
V_DS = 5V
15
10
T_A = 125^oC
5
25^oC _-55o_C
0
2
3
4
5
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.8
1.6
V_GS = 4.0V
1.4
1.2
1
4.5V
5.0V
6.0V
10V
0.8
0
5
10
15
20
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.18
0.14
0.1
I_D = 1.7 A
T_A = 125^oC
0.06
T_A = 25^oC
0.02
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V_GS = 0V
10
1
0.1
0.01
T_A = 125^oC
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3812 Rev B1(W)