FDQ7698S Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – Dual Notebook Power Supply N-Channel PowerTrench

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
VSD
Drain-Source Diode Forward
VGS = 0 V, IS = 3.5 A (Note 2) Q2
Voltage
VGS = 0 V,
IS = 7 A
(Note 2)
VGS = 0 V, IS = 2.1 A (Note 2) Q1
trr
Diode Reverse Recovery Time IF = 15A,
Q2
Qrr
Diode Reverse Recovery Charge diF/dt = 300 A/µs
(Note 3)
trr
Diode Reverse Recovery Time IF = 12A,
Q1
Qrr
Diode Reverse Recovery Charge diF/dt = 100 A/µs
(Note 3)
3.5
A
2.1
0.4 0.7
V
0.5
0.7 1.2
26
nS
29
nC
25
nS
14
nC
NOTE :
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user’s board design.
a) 68°C/W when
mounted on a 1in² pad
of 2 oz copper (Q1).
b) 52°C/W when
mounted on a 1in² pad
of 2 oz copper (Q2).
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
See “SyncFET Schottky diode characteristics” below.
c) 118°C/W when mounted
on a minimum pad of 2 oz
copper (Q1).
d) 94°C/W when mounted on
a minimum pad of 2 oz
copper (Q2).
FDS7698S Rev C1 (W)