FDP75N08 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 75V N-Channel MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
GS
Top: 15.0V
9.0V
7.5V
7.0V
6.5v
6.0V
10²
5.5V
5.0V
Bottom : 4.5V
10¹
10⁰
* Note :
1. 250µs Pulse Test
2. T =25⁰C
C
10¹
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
100
150⁰C
25⁰C
10
-55⁰C
* Note :
1. V =40V
DS
2. 250µs Pulse Test
1
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.012
0.011
0.010
V = 10V
GS
0.009
0.008
0.007
0
V = 20V
GS
* Note : T = 25oC
J
25
50
75
100
125
150
175
200
I , Drain Current [A]
D
10²
150⁰C
25⁰C
10¹
* Note :
1. V =0V
GS
2. 250µs Pulse Test
10⁰
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain Violtage [V]
DS
Figure 5. Capacitance Characteristics
6000
5000
4000
3000
2000
1000
0
10^-1
C
oss
C
iss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
* Note :
1. V = 0 V
C
rss
GS
2. f = 1 MHz
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 6. Gate Charge Characteristics
12
10
V = 37.5V
DS
V = 60V
DS
8
6
4
2
* Note : I = 75A
D
0
0
10
20
30
40
50
60
70
80
Q , Total Gate Charge [nC]
G
FDP75N08 Rev. A
3
www.fairchildsemi.com