FDP39N20_07 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 200V N-Channel MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
10² Top :
V_GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10¹
10⁰
10^-1
œ Notes :
1. 250µ s Pulse Test
2. T_C = 25
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.14
0.12
0.10
0.08
0.06
0.04
0
V_GS = 10V
V_GS = 20V
œ Note : T_J = 25
25
50
75
100
125
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
4000
2000
0
10^-1
C_oss
C_iss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
œ Note ;
C_rss
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
10²
10¹
10⁰
2
150^oC
25^oC
-55^oC
œ Notes :
1. V_DS = 40V
2. 250µ s Pulse Test
4
6
8
10
12
V_GS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10²
10¹
150
25
œ Notes :
1. V_GS = 0V
2. 250µ s Pulse Test
10⁰
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V_SD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
V_DS = 40V
V_DS = 100V
8
V_DS = 160V
6
4
2
œ Note : I_D = 39A
0
0
10
20
30
40
50
60
Q_G, Total Gate Charge [nC]
3
FDP39N20 / FDPF39N20 Rev. A
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