FDP13N50F_12 Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – N-Channel MOSFET 500V, 12A, 0.54Ω

Typical Performance Characteristics
Figure 1. On-Region Characteristics
30 _{VGS = 15.0 V}
10.0 V
8.0 V
7.0 V
6.5 V
10
6.0 V
5.5 V
*Notes:
1. 250μs Pulse Test
2. T_C = 25^oC
1
1
10
20
V_DS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.9
0.8
0.7
0.6
V_GS = 10V
0.5
0.4
0.3
0
V_GS = 20V
*Note: T_J = 25^oC
10
20
30
40
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
3000
C_oss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_iss
1500
*Note:
1. V_GS = 0V
2. f = 1MHz
C_rss
0
0.1
1
10
30
V_DS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
50
*Notes:
1. V_DS = 20V
2. 250μs Pulse Test
10
150^oC
25^oC
1
3
4
5
6
7
8
V_GS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150^oC
25^oC
10
*Notes:
1. V_GS = 0V
2. 250μs Pulse Test
1
0.0
0.5
1.0
1.5
2.0
2.5
V_SD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
V_DS = 100V
8
V_DS = 250V
V_DS = 400V
6
4
2
*Note: I_D = 13A
0
0
5
10 15 20 25 30
Q_g, Total Gate Charge [nC]
FDP13N50F / FDPF13N50FT Rev.C1
3
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