FDP047N10 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 100V, 164A, 4.7mOHM

Typical Performance Characteristics
Figure 1. On-Region Characteristics
300
7V
8V
6.5 V
10V
100
6.0 V
5.5 V
10
6
0.1
V_GS = 5V
*Notes:
1. 250μs Pulse Test
2. T_C = 25^oC
1
5
V_DS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
10
8
6
V_GS = 10V
4
V_GS = 20V
2
0
*Note: T_J = 25^oC
0
100
200
300
400
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
16000
14000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_{iss Crss = Cgd}
12000
10000
8000
C_oss
6000
*Note:
1. V_GS = 0V
2. f = 1MHz
4000
C_rss
2000
0
0.1
1
10
30
V_DS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
400
100
175^oC
-55^oC
25^oC
10
*Notes:
1. V_DS = 20V
2. 250μs Pulse Test
1
2
4
6
8
V_GS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
300
100
175^oC
25^oC
10
*Notes:
1. V_GS = 0V
2
2. 250μs Pulse Test
0.0
0.5
1.0
1.4
V_SD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
V_DS = 20V
V_DS = 50V
8
V_DS = 80V
6
4
2
*Note: I_D = 75A
0
0
30 60 90 120 150 180
Q_g, Total Gate Charge [nC]
FDP047N10 Rev. B2
3
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