FDN304PZ Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

Typical Characteristics
10
V_GS = -4.5V
8
-6.0V
6
-2.5V
-3.0V
-2.0V
4
2
-1.5V
0
0
0.5
1
1.5
2
-V_DS, DRAIN-SOURCE VOLTAGE (V)
3
2.5 _{VGS = -2.0V}
2
-2.5V
1.5
-3.0V
-3.5V
-4.5V
-6.0V
1
-10.0V
0.5
0
2
4
6
8
10
-I_D, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.3
I_D = -2.4A
V_GS = -4.5V
1.2
1.1
1
0.9
0.8
-50
-25
0
25
50
75
100
125
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
0.14
I_D = -1.2 A
0.12
0.1
0.08
0.06
0.04
T_A = 25^oC
T_A = 125^oC
0.02
0
2
4
6
8
10
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V_DS = - 5V
8
6
4
T_A =
125^oC
-55^oC
2
25^oC
0
0
0.5
1
1.5
2
2.5
3
-V_GS, GATE TO SOURCE VOLTAGE (V)
100
V_GS = 0V
10
1
0.1
0.01
0.001
T_A = 125^oC
25^oC
-55^oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN304PZ Rev C (W)