FDMW2512NZ Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

Typical Characteristics
50
45
40
35
30
25
20
15
10
5
0
0
V_GS = 4.5V
3.5V
3.0V
2.5V
1
2
3
V_DS, DRAIN-SOURCE VOLTAGE (V)
2.0V
1.8V
4
Figure 1. On-Region Characteristics.
2.4
2.2
2
V_GS = 1.8V
1.8
1.6
2.0V
1.4
2.5V
1.2
3.1V
4.0V
1
0.8
0
5
10
15
20
I_D, DRAIN CURRENT (A)
4.5V
25
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
I_D = 7.2A
V_GS = 4.5V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
0.074
0.066
I_D = 3.6A
0.058
0.05
0.042
T_A = 125^oC
0.034
0.026
0.018
T_A = 25^oC
0.01
1
2
3
4
5
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
V_DS = 5V
25
20
T_A = -55^oC
25^oC
125^oC
15
10
5
0
0.5
1
1.5
2
2.5
3
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
V_GS = 0V
10
1
0.1
0.01
0.001
T_A = 125^oC
25^oC
-55^oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMW2512NZ Rev D